2. Micro-nanotechnologies revolutionize optics and optoelectronics
In the 1980s-1990s, the development of techniques for growing III-V semiconductors on GaAs or InP substrates, such as molecular beam epitaxy (MBE) or metal-organic vapor deposition (MOCVD), made it possible to achieve deposition accuracies close to the thickness of a molecular layer (≈ 0.2 nm)
. It was then possible to produce semiconductor...
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Micro-nanotechnologies revolutionize optics and optoelectronics