1. Physical properties of III-N materials
III-V semiconductor materials from the gallium nitride sector are composed of elements from columns 3 and 5 of Mendeleev's periodic table. They can be synthesized in three different crystallographic forms (figure
1
):
wurtzite ;
zinc-blende ;
rock salt.
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Physical properties of III-N materials
Bibliography
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(1) - WRIGHT (A.F.), NELSON (J.S.) -
Consistent structural properties for AlN, GaN, and InN.
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Phys. Rev. B, 51(12), pp. 7866-7869 (1995).
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(2) - FOUTZ (B.E.), O'LEARY (S.K.), SHUR (M.S.), EASTMAN (L.F.) -
Transient...
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