Physical properties of III-N materials
Dispositifs HEMT à base de GaN

III-V semiconductor materials from the gallium nitride sector are composed of elements from columns 3 and 5 of Mendeleyev's periodic table. They can be synthesized in three different crystallographic forms: wurtzite, zinc-blende and rock salt (figure 1 ). Obtaining these different structures depends on a number of parameters, such as growth conditions (pressure, temperature, III/V ratio, etc.) and the crystallographic orientation of the substrate used.