HEMT field effect structures
HEMTs Devices based on GaN Technology and characterization

Field-effect transistors are unipolar. The only carriers are usually electrons, as they offer greater mobility than holes. The principle of this component is based on the existence of a conductive channel whose conductance can be modulated by applying an electric field perpendicular to the current direction.

A field-effect transistor (figure 1) consists of an n-type semiconductor parallelepiped and three metal contacts: two ohmic contacts to establish an electrical connection with the channel, and a Schottky contact to establish the control. The denomination of the ohmic contacts is defined in relation to the direction of the current when a positive voltage is...