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Unlike the EMC of components or electronic equipment, systems EMC presents specific features. Up to the final stage of qualification, it is important to master the definition of system and to work in successive phases. These stages are punctuated by specifications, analysis of correlations between EMC contributors, modeling and tests. In this article, we present specific aspects of EMC that we meet on a system, and the incremental approach in demonstration logic. Examples from the domain of space launchers are used to illustrate the different points raised.
The essential characteristic of high-frequency conductors is that they keep pace with the technological developments of materials in order to limit losses and miniaturize electronic devices. This requires a theoretical reassessment of transportation phenomena due to the introduction of nanotechnologies. Numerous applications are discussed within a more traditional context: in electromagnetic compatibility (EMC), circuits and planar lines, losses by radiation and use of quasi-optical techniques.
Given the limitations of lithium-ion batteries (cost, safety, resources), new technologies such as all-solid-state or sodium-based batteries are currently being researched. Their performance depends heavily on the quality of the electrode-electrolyte interfaces. Atomic layer deposition (ALD) enables the creation of ultra-thin, uniform coatings on complex surfaces, thereby improving electrode protection, performance and battery lifespan. This technique, therefore, appears to be a promising solution for next-generation batteries.
Atomic Layer Deposition (ALD) is a thin-film deposition technique with atomic precision widely used in electronics and microelectronics. This method enables precise control of film thickness and composition, which is crucial for manufacturing advanced electronic devices. ALD is valued for its conformality, meaning its ability to uniformly coat substrates with complex geometries, including 3D structures. This document highlights two main applications: the fabrication of advanced FDSOI and FinFET transistor gates, and recent advances in ferroelectric memories.
Since the emergence of the first MMICs (Monolithic Microwave Integrated Circuits), in 1975, this technology has continuously evolved and now supports a wide range of applications. This article reviews the performance, technologies, and design tools associated with these circuits. It then focuses on the technological processes and steps for both III-V and silicon platforms. The development of heterogeneous MMICs integrating multiple technologies, either at the chip level or within a package, is also addressed.
Antennas are essential to communication systems, but their performance is limited by conventional materials. Metamaterials, which appeared in the early 2000s, offer new possibilities thanks to their extraordinary electromagnetic properties. When combined with antennas, they enable miniaturization, radiation control, and improved gain. The purpose of this article is to clarify the concepts and terminology used, then to present several methods for sizing antennas with metamaterials when possible, to identify certain limitations, or more simply to define the advantages of the proposed metamaterial solution.
This article reviews and presents the basic theoretical and practical aspects of electromagnetic compatibility (EMC). The definitions and descriptions of key electromagnetic interactions are discussed, from near-field to far-field radiation interactions. The fundamental mechanisms underlying the interactions between charged particles and components are described, together with the basic mechanisms that provide an understanding of the noise generated by large-sized digital electronic circuits.
This paper intends to provide the keys to understanding silicon MOS (Metal-Oxide-Semiconductor) transistor operation, including process, advantages and limitations. After an introduction on MOS device structure and on how an MOS capacitor functions, transistor electrical characteristics will be described, to get a handle on the different operating regimes. A special focus will be made on the performance evaluation and optimization description, while linking it to the technological development roadmap and its associated limitations. Conventional bulk MOS transistor structure evolution and its scaling will be described up to the introduction of new transistor structures that are mandatory to continue to follow Moore’s law.
Dielectric resonators (DR) are central and basic elements in microwaves circuits with, for example, filters or oscillators. In this article, we will first describe how to measure the most important parameters for DR (permittivity, quality factor and thermal stability) as well as the elaboration process of the dielectric ceramic parts. Then will be presented some selection criteria to pick a DR and some market references. In a third part, we will introduce the physical origin and meaning of the permittivity of the material, followed by a non-exhaustive list of dielectric materials and their properties and chemical diagrams.
Dielectric resonators are non-conductive high permittivity ceramic objects, used to replace microwave cavities and reduce their size. They confine electromagnetic waves with up to 95% of their energy, through the TE01d mode of resonance. That article introduces the RLC resonant circuit, the microwave resonant cavity and the different coupling modes within the resonators. The quality factor of the cavities and dielectric resonators is obtained with resonance linewidth measurements of filters in transmission or absorption mode. Other ways of loading the cavity allow volume reduction of filters or access to higher frequencies. See for example the TM, HEM, TEM or gallery mode.
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