The external quantum efficiency (η
q, ext
) of a light-emitting diode is defined as the ratio of the number of photons emitted to the number of electrons injected. It can be described as the product of the electron-hole recombination rate (η
r
), the radiative de-excitation probability (η
dr
), the photoluminescence efficiency (φ
PL
) and the fraction of photons extracted from the device (η
opt
) :
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