Solid-state microwave power : Maximum transistor power

Maximum transistor power
Solid-state microwave power

Author : Thierry LEMOINE

Review date: December 15, 2022 | Lire en français

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2. Maximum transistor power

2.1 Johnson criterion and maximum linear power

If V _B represents the breakdown voltage of a FET, the maximum microwave (or RF) linear power (per unit of gate width) that it can deliver is written, neglecting the waste voltage :

P_{{W_out_max}_{}} \approx V_{B}^{}^{2} / 8 Z_{W_out} (en W / mm)

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Maximum transistor power

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Solid-state amplifiers and performance

Bibliography

(1) - MISHRA (U.K.), SINGH (J.) - Semiconductor Device Physics and Design. - Springer (2008).
(2) - BAHL (I.J.) - RF and Microwave Transistor Amplifier. - Wiley (2009).
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Maximum transistor power Solid-state microwave power

2. Maximum transistor power

2.1 Johnson criterion and maximum linear power

Bibliography

Maximum transistor power
Solid-state microwave power