Applying reliability optimization to HEMT
Optimization and reliability of complex systems

The High Electron Mobility Transistor (HEMT), based on gallium nitride GaN, has proven its effectiveness in high-power systems. This technology has a very special structure that operates under exceptional conditions, such as high power, high temperature and high frequency. Thanks to all these advantages, HEMT can be found in many fields, including telecommunications, electronic warfare and satellites.

Most characteristics, such as electron mobility or thermal conductivity, change with temperature; these characteristics tend to deteriorate as the temperature in the structure rises, due to the phenomenon of self-heating. This phenomenon can...