Bibliography
Heterostructure components : nanoelectronic and nanophotonic applications

ReferencesGRIFFITH (Z.)RODWELL (M.J.W.)FANG (X.-M.)LOUBYCHEV (D.)WU (Y.)FASTENAU (J.M.)LIU (A.W.K)InGaAs/InP DHBTs with 120-nm collector having simultaneously high f_T , $f_{max}⩾450GHz$.IEEE Electron Device Letters, 26(9), p. 530-2 (2005).TSAI (M.-K.)TAN (S.-W.)YANG (Y.-J.)LOUR (W.-S.)Improvements in direct-current characteristics of Al_0,45Ga_0,55As-GaAs digital-grade superlaticce emitter HBTs with reduced turn-on voltage by wet oxydation.IEEE Transactions on Electron Devices, 50(2), p. 303-9 (2003).GRIFFITH (Z.)DAHLSTRÖM (M.)URTEAGA (M.)RODWELL (M.J.W.)FANG (X.-M.)LUBYSHEV (D.)WU (Y.)FASTENAU (J.M.)LIU (W.K.)InGaAs-InP Mesa DHBTs with...