Applications
Wide bandgap semi-conductors : the silicon carbide domain (SiC)

We've already seen that the emergence of SiC-based components was directly linked to advances in technology, and in substrate technology in particular. Indeed, since any defect initially present in the substrate replicates itself, more or less easily, in the active layer(s), it is this defect that ultimately conditions the passage of high current densities and, therefore, the maximum value of the power delivered. The current objective for power components is to achieve an active surface area of just a few square centimetres (1 to 2 cm ² ), so as to be able to routinely deliver currents of around a hundred amperes. This has practically been achieved