3. Modification and synthesis of materials by layout
At high doses, doping ions, implanted in a matrix under appropriate experimental conditions (matrix temperature, ion energy and flux), enable alloy layers to be synthesized at a controlled depth.
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This method is used in particular in silicon to form buried layers of metal silicides by implantation of Ni, Co or Fe. The various stages...
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Modification and synthesis of materials by layout
Bibliography
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(1) - KOSTLER (H.), TRAVERSE (A.), NEDELLEC (P.), DUMOULIN (L.), RUAULT (M.-O.), SCHAPBACH (L.), BURGER (J.P.), BERNAS (H.) -
A new hydride : MgHx prepared by ion implantation.
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Journal of Physics : Condens. Matter, Institut Of Physics (IOP) Publishing Ltd, 3, p. 8767-8776 (1991).
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