Conclusion
Atomic Layer Deposition (ALD)

Add to my library

RE253 V1 Archive

Conclusion
Atomic Layer Deposition (ALD)

Authors : Nathanaelle SCHNEIDER, Frédérique DONSANTI

Publication date: October 10, 2016 | Lire en français

Add to my library Add to my library

Logo Techniques de l'Ingenieur You do not have access to this resource.
Request your free trial access! Free trial

Already subscribed?

6. Conclusion

With ever-smaller devices and increasingly complex structures, the need to deposit conformal, thin layers of controlled thickness and composition has never been greater. The ALD technique, with its self-limiting and separated reactions, is able to meet these constraints. Because of these advantages, numerous ALD processes have been developed for a wide variety of materials, from metals to oxides, metal nitrides to complex ternary materials, enabling ALD to be used in a very diverse number of industrial applications. To meet this industrial need as effectively as possible, new reactor designs have emerged, such as the SALD

You do not have access to this resource.
Logo Techniques de l'Ingenieur

Exclusive to subscribers. 97% yet to be discovered!

You do not have access to this resource. Click here to request your free trial access!

Already subscribed?


Article included in this offer

"Metal treatments"

( 131 articles )

Complete knowledge base

Updated and enriched with articles validated by our scientific committees

Services

A set of exclusive tools to complement the resources

View offer details
Contact us