2. General aspects of SiC
A little history
Silicon carbide was discovered in 1824 by accident, during an experiment by Berzellius
, who was trying to produce diamond. Although silicon carbide does not occur naturally on earth, Moissan
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General aspects of SiC
References
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(1) - ESAME (O.) et al -
Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP.
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Microelectronics Journal 35, 901-908 (2004).
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(2) - -
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