1. Physical properties of III-N materials

1.1 Crystal structure

III-V semiconductor materials from the gallium nitride sector are composed of elements from columns 3 and 5 of Mendeleev's periodic table. They can be synthesized in three different crystallographic forms (figure 1 ):

wurtzite ;
zinc-blende ;
rock salt.

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Physical properties of III-N materials

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page HEMTs Devices based on GaN - Material and epitaxy

Heteroepitaxy of III-N materials

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Bibliography

(1) - WRIGHT (A.F.), NELSON (J.S.) - Consistent structural properties for AlN, GaN, and InN. - Phys. Rev. B, 51(12), pp. 7866-7869 (1995).
(2) - FOUTZ (B.E.), O'LEARY (S.K.), SHUR (M.S.), EASTMAN (L.F.) - Transient electron transport in wurtziteGaN, InN,...

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