SiC materials
Wide bandgap semi-conductors : the silicon carbide domain (SiC)
Article REF: E1990 V2
SiC materials
Wide bandgap semi-conductors : the silicon carbide domain (SiC)

Authors : Jean Camassel, Sylvie Contreras

Publication date: August 10, 2012, Review date: December 4, 2017 | Lire en français

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3. SiC materials

It was Swedish chemist Jöns Jakob Berzelius who, as early as 1824, put forward the possibility of synthesizing the compound SiC in stoichiometric form. He foresaw the existence of a stable chemical bond (partially ionic) between silicon and carbon, different from the covalent bonds found in silicon and diamond. However, it wasn "t until 1891 that the American chemist Edward Goodrich Acheson in Pennsylvania

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