1. DRAM memories
The first use of ALD for volume chip production dates back to the early 2000s, for the manufacture of dielectrics and capacitor electrodes for DRAM memories (figure 1). An elementary memory cell consists of a transistor associated with a capacitor, and the logic state of this memory is then defined as a function of the presence or absence of electrical charges across the capacitor.
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DRAM memories
MIM capabilities
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