2. MOS capacitance
The MOS capacitor forms the basis of the MOS transistor and consists of a stack of a metal, an insulator, and a semiconductor (Figure4). In industrial CMOS technologies, the semiconductor is silicon, and the insulator is, at least in part, silicon dioxide (SiO2), to ensure a high-quality interface with the silicon substrate. The metal is generally composed of titanium nitride (TiN) for advanced technologies, and degenerately doped polysilicon for others. The voltage applied to the gate is denoted and the value of the electrostatic potential at the oxide/semiconductor interface defines the surface potential, denoted by...
You do not have access to this resource.
Exclusive to subscribers. 97% yet to be discovered!
Already subscribed?
Log in!
Ongoing reading
MOS capacitance