Fully Depleted Silicon On Insulator (FD-SOI) Devices : Special physical mechanisms in FD-SOI transistors

Special physical mechanisms in FD-SOI transistors
Fully Depleted Silicon On Insulator (FD-SOI) Devices

Author : Sorin CRISTOLOVEANU

Review date: January 18, 2021 | Lire en français

Add to my library

2. Special physical mechanisms in FD-SOI transistors

2.1 Short channel effects

As the transistor length decreases, various mechanisms become sufficiently amplified to challenge the totalitarian supremacy of the gate over the channel. For example, the charge sharing effect (CSE), between regions controlled by the gate or by the source and drain junctions, leads to a decrease in the threshold voltage V _TF measured at low drain voltage V _D (figure 2 ).

You do not have access to this resource.

Exclusive to subscribers. 97% yet to be discovered!

You do not have access to this resource. Click here to request your free trial access!

Already subscribed? Log in!

Ongoing reading
Special physical mechanisms in FD-SOI transistors