3. Specific techniques for characterizing FD-SOI components
The pseudo-MOSFET transistor is activated by applying two pins (source and drain) to the surface of a Si island etched on the FD-SOI plate.
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Specific techniques for characterizing FD-SOI components
Bibliography
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(1) - CRISTOLOVEANU (S.), BALESTRA (F.) -
La technologie Silicium Sur Isolant.
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Techniques de l'Ingénieur, 2
nd
édition, art. no.
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