Specific techniques for characterizing FD-SOI components
Fully Depleted Silicon On Insulator (FD-SOI) Devices

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Specific techniques for characterizing FD-SOI components
Fully Depleted Silicon On Insulator (FD-SOI) Devices

Author : Sorin CRISTOLOVEANU

Review date: January 18, 2021 | Lire en français

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3. Specific techniques for characterizing FD-SOI components

3.1 Pseudo-MOSFET method for FD-SOI substrates

The pseudo-MOSFET transistor is activated by applying two pins (source and drain) to the surface of a Si island etched on the FD-SOI plate.

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