3. Characterization of HEMT transistors
After manufacture, GaN HEMT transistors for power applications are measured using a variety of techniques. To this end, when a set of masks is produced, in addition to the transistors themselves, various test patterns are included to characterize the manufacturing process (compliance with dimensions, yield, electrical parameter values, etc.).
3.1 Electrical characterization in static and pulse regimes
3.1.1 Electrical quantities under static conditions
Characterization of the components in the...
Exclusive to subscribers. 97% yet to be discovered!
Already subscribed? Log in!
Characterization of HEMT transistors
Electronic devices
Bibliography
Exclusive to subscribers. 97% yet to be discovered!
Already subscribed? Log in!
Article included in this offer
"Electronics"
(
268 articles
)
Updated and enriched with articles validated by our scientific committees
A set of exclusive tools to complement the resources
