Technological processes for HEMT devices
Dispositifs HEMT à base de GaN

To implement HEMT transistor technology, two lithography processes are used to carry out the various stages: optical lithography, which can produce grids up to around 1 µm in length, and electronic lithography, which is a state-of-the-art tool for designing submicrometer grids. The latter technique enables patterns to be written with a resolution of up to ten nanometers. We use a set of masks comprising several writing levels, corresponding to the different stages in the manufacture of HEMTs. Figure 9 shows a HEMT component at the end of the