Conclusion
Wide bandgap semi-conductors : the silicon carbide domain (SiC)

The economic stakes involved in power electronics applications operating at high temperature, high voltage and high power are now clearly identified. With the exception of the ultra-high voltage market, they are based above all on the technology and market development of electric and hybrid electric vehicles. For pure electric vehicles, the need to recharge batteries as quickly (i.e. as efficiently) as possible is a selling point. For hybrid vehicles, the need to be able to rapidly interconnect high levels of drive power (thermal and electric) is a necessity.

In 2001, the first SiC Schottky diodes were marketed. Ten years later, it was the turn of the MOSFET. At the same time, wafer diameters were increased from 3 to 6 in., and the cost of the technology per mm ² implemented was reduced by a factor of 2. Today, the industrial...