ABSTRACT
This paper describes the various technologies and associated passive devices for the fabrication of Monolithic Microwave Integrated Circuits (MMIC). It emphasizes the description of integrated passive components and their electrical modeling.
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AUTHORS
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Gilles DAMBRINE
: Professor at the University of Lille, Institut d'Électronique de Microélectronique et de Nanotechnologies, IEMN, France
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Didier BELOT
: STMicroelectronics, Crolles, France
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Pascal CHEVALIER
: STMicroelectronics, Crolles, France
INTRODUCTION
This article is a logical continuation of the article [
E 1426
], dedicated to transistors and active components used in MMICs; this time it covers all passive components such as resistors, capacitors, inductances and propagation structures.
In this article, we review the description of passive components and their modeling, as well as the description of bias circuit architectures.
In the first section, we describe the main types of passive components used in MMIC design, and their electrical modeling principles. The second section deals with transistor bias circuit architectures, which are common features of MMIC circuits.
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KEYWORDS
Microelectronics
| silicon technology
| III-V technology
Ongoing reading
MMIC : devices and technologies. Passive components