3. Corrective effects
The operation of a long, wide transistor (W; L > > 1 µm) is correctly described by the model presented in paragraph
2
.
Submicron transistors are subject to a number of corrective, parasitic effects, the manifestations of which can be considered second-order when ...
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Corrective effects
References
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(1) - CAND (M.), DEMOULIN (J.-L.), LARDY, SENN (P.) - Conception des circuits intégrés MOS, - Éditions Eyrolles et CNET-ENST, 1986.
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(2) - ARRORA (N.) - MOSFET Models for VLSI Circuit Simulation. - Springer Verlag 1993.
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(3) - COLINGE (J.-P.), VAN DE WIELE...
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