1. Basic principle and structures of MOS transistors
The operating principle of a MOS (Metal-Oxide-Semiconductor) transistor is based on the "field effect", which consists in electrostatically modulating a density of mobile charges in a semiconductor. This modulation is caused by an electric field perpendicular to the direction of movement of these charges, and acting between two electrodes separated by a dielectric, as in a planar capacitor.
Figure 1 illustrates the field effect in a schematic MOS transistor:
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Basic principle and structures of MOS transistors