Heterojunction bipolar transistors
III-V heterostructure-based transistors and integrated circuits

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E2450 V2 Article

Heterojunction bipolar transistors
III-V heterostructure-based transistors and integrated circuits

Authors : André SCAVENNEC, Sylvain DELAGE

Review date: June 3, 2015 | Lire en français

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4. Heterojunction bipolar transistors

The use of a large-gap-small-gap heterojunction as the emitter-base junction of a bipolar transistor can significantly improve performance. Although the idea goes back a long way, it was only convincingly implemented following the development of modern MBE and MOVPE epitaxy techniques in the early 1980s. This type of component is presented below in the particular case of the In0.49Ga0.51P/GaAs material pair, the most widely used today.

4.1 InGaP (N)/GaAs (p) heterojunction bipolar transistor (HBT)

The InGaP/GaAs HBT is a bipolar transistor whose In emitter0.49Ga0.51P has a larger bandgap (1.89 eV) than the GaAs base (see typical structure and band diagram at

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