2. Modeling Schottky diodes in the forward regime
Knowing the resistivity as calculated in §
1.6.5
, it is possible to calculate the series resistance of a Schottky...
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Modeling Schottky diodes in the forward regime
References
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(1) - JACQUIER (C.) -
Nouvelles approches de la croissance épitaxiale de SiC : transport chimique en phase vapeur (CVT) et techniques à partir d'une phase liquide Al–Si.
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Thèse de doctorat, Univ. Claud Bernard, LYON 1, 220 p., soutenue le 18 déc. 2003.
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(2) - KONSTANTINOV (A.O.)...
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