1. Background
Philippe ANDREUCCI Research Engineer CEA-LETI - GRENOBLE
Laurent DURAFFOURG Research Engineer, CEA-LETI – GRENOBLE
New-generation MOS transistors and their various potential replacements (molecular transistors, single-electron transistors – Single Electron Transistor – SET) are the subject of particular attention
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Background
Bibliographic references
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(1) - SÉE (J.) -
Théorie du blocage de Coulomb appliquée aux nanostructures semi-conductrices : modélisation des dispositifs à nanocristaux de silicium.
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Thèse Doctorat, Université Paris XI, Orsay, déc. 2003.
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(2) - EKINCI (K.L.) et al -
Ultrasensitive nanoelectromechanical...
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