Glossary
HEMTs Devices based on GaN - Material and epitaxy

Coefficient of thermal expansion; coefficient de dilatation thermique

Measures the relative increase in volume of a semiconductor as temperature is varied.

Conductivité thermique; thermal conductivity

Energy (quantity of heat) transferred per unit area and time under a temperature gradient of 1 K · m ^-1 .

Croissance homomorphique; homomorphic growth

Growth of epitaxial materials in lattice agreement on the substrate, where the crystalline parameter is identical for all materials.

Croissance pseudomorphique; pseudomorphic growth

Growth in which the epitaxial materials have different crystal parameters, but not too far apart: when growing a layer of mesh-mismatched material...