Schottky diodes
Unipolar and mixed power semiconductors (part 1)

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Schottky diodes
Unipolar and mixed power semiconductors (part 1)

Author : Philippe LETURCQ

Publication date: November 10, 2001 | Lire en français

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2. Schottky diodes

2.1 Typical structure

Schottky diodes use the rectifying properties of the metal-semiconductor contacts of the same name. Unlike ohmic contacts, these are made with a choice of materials such that a depopulated space charge is established in the semiconductor, in the vicinity of the contact (cf. , § 2.2).

For power diodes, couples made of moderately doped N-type silicon (from a few 10 14 to a few 1015 cm-3 depending on the blocking voltage targeted) and metals or alloys with high work function (platinum, molybdenum, tungsten, platinum-nickel..) determine, after heat treatment (formation of silicides), a potential barrier whose height ΦB, seen from the metal, is of the order of 0.7 to 0.9 V depending on the case. The corresponding diffusion voltageΦ...

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