Characterization of LPE-epitaxial thin films

Crystalline thin films Elaboration processes and applications

Figure 1 - Description of the different epitaxial growth modes [50].

Figure 2 - Illustration of the various elementary processes at atomic level involved in the growth phenomenon.

Figure 3 - A-B binary diagram with formation of an incongruent fusion compound

Figure 4 - LPE device for growing fluoride thin films

Figure 5 - Binary phase diagram of the CaF2-CaCl2 system

Figure 6 - Polarized optical microscope observation of an epitaxial CaF2:3.6%Yb layer on a CaF2 substrate.

Figure 7 - Controlled atmosphere Czochralski-type growth furnace for fluorides

Figure 8 - Phase diagram of the LiF-YF3 binary system

Figure 9 - Surface state of a TR3&#43;-doped LPE substrate

Figure 10 - Tm3&#43;-doped YLF homoepitaxial layer microstructured by dicing as channel waveguides

Figure 11 - Microstructural observations

Figure 12 - Evaluation of the relative disorientation of a ZrO2 thin film epitaxialized on a sapphire substrate [69]

Figure 13 - Two-dimensional RSM representation of the (004) family of planes of an epitaxial layer and its substrate [34].

Figure 14 - Principle of the M-lines measurement technique

Figure 15 - Evolution of the refractive index for different epitaxial layers of YLF:TR3&#43;/YLF [53].

Figure 16 - Photos of an epitaxial LiY layer0.935Gd0.05Pr0.015F4 mounted in waveguide configuration in a planar laser cavity (after [73] [74]).

Figure 17 - Illustrations of laser devices in thin-disk configuration