Background
Dissipation phenomena in nanostructures
Article REF: NM125 V1
 Background
Dissipation phenomena in nanostructures

Authors : Philippe ANDREUCCI, Laurent DURAFFOURG

Publication date: January 10, 2006 | Lire en français

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1.  Background

Philippe ANDREUCCI Research Engineer CEA-LETI - GRENOBLE

Laurent DURAFFOURG Research Engineer, CEA-LETI – GRENOBLE

1.1 Nanotechnology and mechanical nanosystems (NEMS)

New-generation MOS transistors and their various potential replacements (molecular transistors, single-electron transistors – Single Electron Transistor – SET) are the subject of particular attention

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