Short-circuit protection
MOSFET and IGBT control circuits
Article REF: D3233 V1
Short-circuit protection
MOSFET and IGBT control circuits

Authors : Stéphane LEFEBVRE, Bernard MULTON

Publication date: August 10, 2003 | Lire en français

Logo Techniques de l'Ingenieur You do not have access to this resource.
Request your free trial access! Free trial

Already subscribed?

2. Short-circuit protection

Short-circuiting is a highly restrictive malfunction for power semiconductor components (figure 4 ), as it requires them in simultaneously withstanding high voltages and currents to have sufficient safety area and to be able to transiently dissipate very high energies. In the following example, the T 1 and T 5 transistors of a three-phase inverter are normally conducting, and a short circuit appears at the load. The supply voltage finds itself applied across the terminals of the two passing IGBTs through the single inductance of the switching mesh. The current will therefore increase very rapidly, with a speed imposed by the voltage U DC and the mesh inductance....

You do not have access to this resource.
Logo Techniques de l'Ingenieur

Exclusive to subscribers. 97% yet to be discovered!

You do not have access to this resource. Click here to request your free trial access!

Already subscribed?


Ongoing reading
Short-circuit protection

Article included in this offer

"Conversion of electrical energy"

( 273 articles )

Complete knowledge base

Updated and enriched with articles validated by our scientific committees

Services

A set of exclusive tools to complement the resources

View offer details