Junction field-effect transistors and derived components
Unipolar and mixed power semiconductors (part 1)

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D3108 V1 Article

Junction field-effect transistors and derived components


Unipolar and mixed power semiconductors (part 1)

Author : Philippe LETURCQ

Publication date: November 10, 2001 | Lire en français

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3. Junction field-effect transistors and derived components

3.1 General

The junction field effect (see article , § 2.5 ) enables control of the current flowing in unipolar power devices. The principle is to vary the cross-section of conducting channels by extending the charge of unpopulated space of normally reverse-polarized "gate" junctions....

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