Environmental aspects

HEMTs Devices based on GaN - Material and epitaxy

Figure 1 - GaN crystal lattices

Figure 2 - Bandgap width as a function of lattice parameter for various III-N materials

Figure 3 - Band diagram of the isotype heterojunction, neglecting polarization effects

Figure 4 - Electron drift velocity as a function of electric field at 300 K in GaN, AlN and InN bulk materials

Figure 6 - Spontaneous polarization and fixed charge distribution at interfaces for wurtzite GaN with gallium and nitrogen polarities

Figure 7 - Bandgap energy Eg as a function of temperature in binary semiconductors, obtained from the Varshni model

Figure 8 - Two-dimensional representation of carrier energy and temperature in an AlGaN/GaN HEMT on a SiC substrate

Figure 10 - Block diagram of a MOCVD growth frame

Figure 12 - Growth processes in molecular beam epitaxy