2. Electrical modeling of high-frequency transistors

2.1 Linear model for a field-effect transistor

The following approach describes the equivalent "small signal" model applicable to any III-V silicon field-effect transistor. This model is an approximate, macroscopic electrical representation of complex physical phenomena. However, its validity has been demonstrated down to the millimeter range in the case of HEMTs and MOSFETs. This model is a simple and effective solution for the design of microwave and millimeter-scale integrated circuits operating in the linear regime (e.g. low-noise amplifiers).

Figure 3 shows the basic representation of such a diagram. The elements of this schema are generally extracted directly...