Article | REF: E6322 V1

Raman spectroscopy of defects in materials

Authors: Marc D. FONTANA, David CHAPRON, Thomas H. KAUFFMANN, Patrice BOURSON

Publication date: April 10, 2017 | Lire en français

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    Defects intentionally or unintentionally introduced into materials can have various consequences on their Raman spectra, providing valuable information about these defects. The spectrum of the host medium can be modified, forbidden lines activated or additional lines detected. The three characteristics of a Raman line, namely the position of its maximum, its width and its intensity, can be exploited for this purpose. In the analysis and interpretation, however, care must be taken to exclude other possible causes of changes in these line parameters. However, Raman spectroscopy alone cannot identify the nature of a defect. In a first approach, complementary analysis techniques will have to be carried out. On the other hand, for a previously known defect, it is possible to study, for example, its spatial extension, its incorporation profile in the volume from the surface of a solid, its substitution...

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