Conclusion
Atomic Layer Deposition (ALD)
Research and innovation REF: RE253 V1
Conclusion
Atomic Layer Deposition (ALD)

Authors : Nathanaelle SCHNEIDER, Frédérique DONSANTI

Publication date: October 10, 2016 | Lire en français

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6. Conclusion

With ever-smaller devices and increasingly complex structures, the need to deposit conformal, thin layers of controlled thickness and composition has never been greater. The ALD technique, with its self-limiting and separated reactions, is able to meet these constraints. Because of these advantages, numerous ALD processes have been developed for a wide variety of materials, from metals to oxides, metal nitrides to complex ternary materials, enabling ALD to be used in a very diverse number of industrial applications. To meet this industrial need as effectively as possible, new reactor designs have emerged, such as the SALD [RE262]...

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