Conclusion
Fully Depleted SOI Devices: More Moore applications and New Architectures

For the end of the international ITRS roadmap (International Technology Roadmap for Semiconductors, completed in 2016)/IRDS (International Technology Roadmap for Devices and Systems), which began in 2017, several options are envisaged for the next two decades. This article discusses the state of the art and the perspectives of the Fully Depleted Silicon-On-Insulator (FDSOI) devices that are among the most promising for many applications (logic, memories, sensors, power electronics, RF communication, possibility of use at high and low temperatures or under strong radiation, etc.).

The main trends, challenges, limitations and possible solutions for highly integrated devices, based on FD silicon on insulator technology, as well as its extensions to push the limits of circuit integration and optimize their performance, were exposed.

The following...