MOSFET and IGBT control circuits : Low side transistors

Low side transistors
MOSFET and IGBT control circuits

Authors : Stéphane LEFEBVRE, Bernard MULTON

Publication date: August 10, 2003 | Lire en français

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3. Low side transistors

Low side refers to transistors whose source electrode (MOSFETs) or emitter electrode (IGBTs) is at the same potential as the control circuit reference electrode.

3.1 Principle

Example of a control circuit without insulation

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High-side transistors

References

(1) - International Rectifier - Gate drive characteristics and requirements for HEXFETs - . Note d'application, AN-937.
(2) - International Rectifier - Use gate charge to design the gate drive circuit for power mosfets and IGBT - . Note d'application AN-944....

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Low side transistors MOSFET and IGBT control circuits

3. Low side transistors

3.1 Principle

References

Low side transistors
MOSFET and IGBT control circuits