High-side transistors
MOSFET and IGBT control circuits

In many cases, isolation between the control logic circuits and the close control circuit is necessary (figure 11 ). In particular, the control of an inverter arm raises the problem of controlling the high-side switch, the source of which is at a potential varying between 0 V and U _DC . High side refers to transistors whose source electrode (for MOSFETs) or emitter electrode (for IGBTs) is placed at a floating potential that can be high, and can vary rapidly from the reference potential of the control circuit.