Overview
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Read the articleAUTHORS
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Stéphane LEFEBVRE : Associate Professor of Electrical Engineering - Doctorate from the École normale supérieure de Cachan - Senior Lecturer at the Conservatoire National des Arts et Métiers
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Bernard MULTON : Associate Professor of Electrical Engineering - Doctorate from the University of Paris 6 - University Professor, École normale supérieure de Cachan – Antenne de Bretagne
INTRODUCTION
The context and principles of MOSFET (Metal Oxide Semiconductor Field Effect) and IGBT (Insulated Gate Bipolar Transistor) control were the subject of the following articles and .
This article describes control circuits for MOSFET and IGBT insulated-gate transistors. Examples of control circuits for non-isolated low-side transistors and high-side transistors are given.
Control circuits for bipolar power components are studied by .
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MOSFET and IGBT control circuits
Sizing
References
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