Conclusion
Atomic Layer Deposition (ALD)

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RE253 V2 Article

Conclusion
Atomic Layer Deposition (ALD)

Authors : Nathanaelle SCHNEIDER, Élisabeth BLANQUET

Publication date: July 10, 2026 | Lire en français

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5. Conclusion

As devices become smaller and smaller, and structures increasingly complex, the need to deposit conformal, thin layers with controlled composition has never been more critical. The ALD technique, with its self-limiting and separate reactions, is capable of meeting this requirement. Due to these advantages, numerous ALD processes have been developed for a wide variety of materials, ranging from metals to metal oxides and nitrides to complex ternary materials, enabling ALD to be used in a very broad range of industrial applications. To best meet industrial needs, new reactor designs have emerged, such as the Spatial ALD, along with new adapted techniques (ALE, AS-ALD) to reduce costs and ensure the industrial development of this technique. At the same time, a wide range of precursors adapted to the ALD technique has been developed, greatly expanding the variety of materials accessible via...

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