Bipolar power semiconductor components. Part 2

This second part of the study of bipolar power components is mainly devoted to the transistor and thyristor family devices. In continuity with the , it is based on the same general principles as those highlighted in the case of diodes, and the formalism used is identical. The conductivity modulation and carrier storage mechanisms described above are used in controlled components, while the unidirectional and regional analysis framework is retained in its entirety for the sake of didactic simplicity.