1. Electronic properties of silicon

Figure 1 - Schematic representation of a silicon crystal

Figure 2 - Simplified energy diagram

Figure 3 - Variation of intrinsic silicon concentration with temperature

Figure 4 - Variations in average carrier drift velocities as a function of electric field, in the case of silicon

Figure 5 - Variations in electron (µ n) and hole (µp) mobilities as a function of doping impurity concentration ( N ) and temperature (T ), for silicon

Figure 6 - Mobility reduction by carrier-carrier interactions assuming equal hole and electron concentrations ( p &#34; n), in the case of silicon

Figure 7 - Elementary generation-recombination transitions Shockley-Hall-Read

Figure 8 - Ionization coefficients as a function of electric field, for silicon

Figure 9 - Integration path and potential distributions at thermodynamic equilibrium and non-equilibrium, between contacts

Figure 10 - Potential and carrier concentration distributions in an abrupt junction, at thermodynamic equilibrium and under forward and reverse bias

Figure 11 - Asymptotic representation of the direct static characteristic of a &#34;short&#34; P &#43;N junction

Figure 12 - Schematic diagram of a PIN structure

Figure 14 - Approximate charge density, electric field and electrostatic potential distributions in the transition zone of an abrupt junction

Figure 15 - Changes in charge density and electric field distributions for an increase in VR voltage supported in reverse

Figure 16 - Schottky rectifier contact on N-type material: basic structure and pattern of potential distribution

Figure 17 - Carrier distributions (semi-logarithmic scales): example

Figure 19 - Schematic diagram of a MOS structure

Figure 22 - Illustration of unclamped operating mode (conductive channel between source and substrate)

Figure 23 - Illustration of saturated operating conditions

Figure 24 - Idealized characteristics of the MOS field effect

Figure 25 - Junction field effect: illustration of the operating principle

Figure 26 - Idealized characteristics of a junction field-effect device (&#34;long&#34; channel)

Figure 27 - MOS device with preformed channel