Elementary structures. Fundamental effects
Physics of power semiconductors
Article REF: D3102 V1
Elementary structures. Fundamental effects
Physics of power semiconductors

Author : Philippe LETURCQ

Publication date: November 10, 1999 | Lire en français

Logo Techniques de l'Ingenieur You do not have access to this resource.
Request your free trial access! Free trial

Already subscribed?

2. Elementary structures. Fundamental effects

The properties of semiconductor structures used in power components are essentially the unidirectional conduction of PN junctions and metal/Schottky semiconductor contacts, and the three effects that control and interrupt the flow of current in a semiconductor:

  • PNP or NPN bipolar transistor effect ;

  • MOS field effect (metal/oxide/semiconductor) ;

  • junction field effect.

2.1 PN junction

A PN junction is the transition, in a single crystal, between two regions of opposite type. Equipped with ohmic contacts, this structure offers a non-linear current/voltage characteristic that can be directly exploited in rectifier components (junction...

You do not have access to this resource.
Logo Techniques de l'Ingenieur

Exclusive to subscribers. 97% yet to be discovered!

You do not have access to this resource. Click here to request your free trial access!

Already subscribed?


Ongoing reading
Elementary structures. Fundamental effects

Article included in this offer

"Conversion of electrical energy"

( 273 articles )

Complete knowledge base

Updated and enriched with articles validated by our scientific committees

Services

A set of exclusive tools to complement the resources

View offer details
Contact us