Power semiconductors - Thermal problems (part 2)

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D3113 V1 Article

Power semiconductors - Thermal problems (part 2)

Author : Jean-Marie DORKEL

Publication date: August 10, 2003 | Lire en français

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AUTHOR

  • Jean-Marie DORKEL : Doctor of Science - Professor at the Institut national des sciences appliquées de Toulouse - Researcher at LAAS/CNRS, Toulouse

 INTRODUCTION

Analytical and other methods for assessing the temperature of the active zone, or junction temperature, of a power semiconductor component are the subject of a first article. .

In this article, we will address the problem of the interactivity between the power dissipated by the component and its temperature with a view to discussing the validity of the junction temperature concept, and we will conclude our presentation with some considerations on the induced problems of thermal fatigue and reliability.

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