Power semiconductors - Thermal problems (part 2)

Analytical and other methods for assessing the temperature of the active zone, or junction temperature, of a power semiconductor component are the subject of a first article. .

In this article, we will address the problem of the interactivity between the power dissipated by the component and its temperature with a view to discussing the validity of the junction temperature concept, and we will conclude our presentation with some considerations on the induced problems of thermal fatigue and reliability.