Junction field-effect transistors and derived components
Unipolar and mixed power semiconductors (part 1)
Article REF: D3108 V1
Junction field-effect transistors and derived components
Unipolar and mixed power semiconductors (part 1)

Author : Philippe LETURCQ

Publication date: November 10, 2001 | Lire en français

Logo Techniques de l'Ingenieur You do not have access to this resource.
Request your free trial access! Free trial

Already subscribed?

3. Junction field-effect transistors and derived components

3.1 General

The junction field effect (see article , § 2.5 ) enables control of the current flowing in unipolar power devices. The principle is to vary the cross-section of conducting channels by extending the charge of unpopulated space of normally reverse-polarized "gate" junctions....

You do not have access to this resource.
Logo Techniques de l'Ingenieur

Exclusive to subscribers. 97% yet to be discovered!

You do not have access to this resource. Click here to request your free trial access!

Already subscribed?


Ongoing reading
Junction field-effect transistors and derived components

Article included in this offer

"Conversion of electrical energy"

( 273 articles )

Complete knowledge base

Updated and enriched with articles validated by our scientific committees

Services

A set of exclusive tools to complement the resources

View offer details
Contact us