2. IGBT (Insulated-Gate-Bipolar-Transistor)

Introduced in article (§ 1.2), IGBT transistors are mixed devices whose structure derives from that of power MOS transistors by substituting a P emitter for the N ⁺ drain region. The function of this emitter is to inject minority carriers (holes) into the lightly doped N region ^- in order to ensure, in the on-state, the conductivity modulation that pure MOS components lack. Thus, within certain limits, complementary qualities of MOS transistors ("isolated" control, lateral thermal stability) and bipolar transistors ("good compromise" between blocked voltage and on-state current) can be combined, enabling IGBTs to replace these components with advantage in their limit applications, and to take over from them in the high-voltage range (kilovolts). IGBT technology remains closely...